2013
EMSS 2013 Proceeding
Modelling and simuilation of thermal induced stress in 3D nano PMOS
Authors: Abderrazzak El Boukili
Abstract
We are presenting a new physically based numerical model in 3D to calculate the intrinsic stress due to thermal mismatch in Silicon Germanium for 3D nanometer PMOSFETs after deposition. This intrinsic stress is used to calculate the extrinsic stress distribution in the channel which has the advantage of enhancing performances of devices and circuits. Numerical results of channel stress based on this novel model will be presented and discussed for Intel 45 nanometers PMOSFETs. Results obtained with this model are in good agreement with those found in literature using other models.
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